Data centers currently account for about one percent of global energy consumption, amounting to 200 terawatt-hours of electricity annually. This immense energy demand has driven researchers to explore innovative ways to reduce energy usage. A team of scientists has now achieved a groundbreaking advancement in memory technology in close collaboration with Antaios, a magnetic random access memory company in France. Their innovation, based on Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM), offers a highly efficient and powerful solution for data processing and storage—a transformative step forward for technologies ranging from smartphones to supercomputers.