The human brain does more than simply regulate synapses that exchange signals; individual neurons also process information through “intrinsic plasticity,” the adaptive ability to become more sensitive or less sensitive depending on context. Existing artificial intelligence semiconductors, however, have struggled to mimic this flexibility of the brain. A KAIST research team has now developed next-generation, ultra-low-power semiconductor technology that implements this ability as well, drawing significant attention.

KAIST (President Kwang Hyung Lee) announced on September 28 that a research team led by Professor Kyung Min Kim of the Department of Materials Science and Engineering developed a “Frequency Switching Neuristor” that mimics “intrinsic plasticity,” a property that allows neurons to remember past activity and autonomously adjust their response characteristics.

Sodium-ion batteries (SIBs) have long been hailed as a cost-effective alternative to lithium-ion batteries, but their performance has been hindered by inefficiencies in the anode material. A new study introduces an innovative approach to improving hard carbon (HC) anodes, which are vital for SIBs. By manipulating the interfacial chemistry of HC through an in situ coupling strategy, researchers have enhanced sodium ion transport and boosted both the storage capacity and rate capability of HC anodes. This breakthrough could be the key to unlocking the full potential of SIBs, making them a viable option for large-scale energy storage and electric vehicles.