Bipolar-barrier tunnel heterostructures for high-sensitivity mid-infrared photodetection
Peer-Reviewed Publication
Updates every hour. Last Updated: 21-Aug-2025 23:11 ET (22-Aug-2025 03:11 GMT/UTC)
Achieving high specific detectivity at room-temperature, comparable to background-limited mid-infrared (MIR) performance, has been a longstanding challenge in the MIR optoelectronics. Towards this goal, scientist in Singapore designed a bipolar-barrier tunnel heterostructure, which effectively suppresses dark current while facilitating the tunneling of photogenerated carriers, enabling high-sensitivity mid-infrared photodetection. The design will open new avenues for advancement of next-generation infrared optoelectronic devices.
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