19-Sep-2025
Ultrathin films of ferromagnetic oxide reveal a hidden Hall effect mechanism
Institute of Science TokyoPeer-Reviewed Publication
In a recent breakthrough, researchers from Japan discovered a unique Hall effect resulting from deflection of electrons due to “in-plane magnetization” of ferromagnetic oxide films (SrRuO₃). Arising from the spontaneous coupling of spin-orbit magnetization within SrRuO₃ films, the effect overturns the century-old assumption that only out-of-plane magnetization can trigger the Hall effect. The study offers a new way to manipulate electron transport with potential applications in advanced sensors, quantum materials, and spintronic technologies.
- Journal
- Advanced Materials
- Funder
- Japan Science and Technology Agency (JST), Fusion Oriented Research for Disruptive Science and Technology (FOREST) Program, Japan Science and Technology Agency (JST), Precursory Research for Embryonic Science and Technology (PRESTO) Program, Japan Society for the Promotion of Science, Toyota Physical and Chemical Research Institute, Murata Science Foundation, Tokyo Institute of Technology