KAIST develops low-temperature technique for growing crystal-aligned semiconductor films
Peer-Reviewed Publication
Updates every hour. Last Updated: 30-Oct-2026 18:17 ET (30-Oct-2026 22:17 GMT/UTC)
Professor Joonki Suh's team in the Department of Chemical and Biomolecular Engineering has developed a self-aligned, thin-film growth technology that grows tellurium film in a uniform crystal orientation on van der Waals surfaces at a low process temperature of 150°C
The team proposes a new atomic layer deposition technique in which precursors diffuse across the surface and settle into their most stable positions on their own—a technique expected to enable low-power electronic and optical devices based on next-generation semiconductor materialsHarvard SEAS and Max Planck Institute engineering researchers used an inverse-design algorithm to create silicon nitride photonic components that are 500 times smaller than conventional designs.
Harvard engineers used standard industrial weft knitting to create dense fabrics that snap between multiple stable 3D shapes, turning ordinary textiles into mechanical metamaterials.