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Updates every hour. Last Updated: 10-Jun-2026 19:15 ET (10-Jun-2026 23:15 GMT/UTC)
AI breakthrough boosts long-range weather forecasting accuracy
KeAi Communications Co., Ltd.Researchers developed DeepMet, a new AI system that sharply improves long-range weather forecasting across the U.S. The model predicts key temperature and humidity patterns up to 45 days ahead with far greater accuracy than current systems, helping identify extreme heat and cold events earlier. DeepMet offers faster, more reliable guidance for climate preparedness and public-health protection.
- Funder
- Fengyun Application Pioneering Project, National Natural Science Foundation of China, UT AI Tennessee Initiative Seed Funds, MSRA collaborative research project
Artificial superintelligence alignment in healthcare
Osaka Metropolitan UniversityAn Osaka Metropolitan University-led research team conducted a review that examined the theoretical foundations of Artificial Superintelligence and explored how misaligned AI systems could optimize for wrong objectives, leading to patient harm and systemic failures.
- Journal
- Japanese Journal of Radiology
From genome to ecosystem: CNSA accelerates open data sharing worldwide
Nanjing Agricultural University The Academy of Science- Journal
- Horticulture Research
Rapid synergistic multi-polarization losses enable efficient micro-/terahertz-wave absorption and shielding in WO3-based 1T/2H-MoSe2 in-plane heterojunctions
Tsinghua University PressThe proliferation of 5G communication technology and the miniaturization of electronic devices have made protection against human electromagnetic radiation an urgent global public health issue. Concurrently, intensifying great power arms races are driving electromagnetic warfare environments towards full-spectrum capabilities and intelligentization. Microwave (300 MHz–300 GHz) and terahertz wave (0.1–10 THz) technologies, as core frequency bands in electromagnetic spectrum engineering, have deeply penetrated critical fields such as communications, military, healthcare, and industrial inspection. Consequently, electromagnetic wave absorption and shielding have become imperative problems to solve. However, traditional absorbing materials face numerous challenges, such as singular loss mechanisms, a lack of adaptive cross-band regulation capability, and excessive thickness. These limitations severely restrict their application in complex electromagnetic compatibility scenarios.
- Journal
- Nano Research
Himalayan forests: nature's carbon credit powerhouses unveiled
Biochar Editorial Office, Shenyang Agricultural University- Journal
- Carbon Research
A valuable and low‑budget process scheme of equivalized 1 nm technology node based on 2D materials
Shanghai Jiao Tong University Journal CenterEmerging two-dimensional (2D) semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness. As the stacking process advances, the complexity and cost of nanosheet field-effect transistors (NSFETs) and complementary FET (CFET) continue to rise. The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems (IRDS) (2022, https://irds.ieee.org/), but not publicly confirmed, indicating that more possibilities still exist. The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area, power consumption and speed. In this study, a comprehensive framework is built. A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances. And then for benchmarking, the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint. Under these conditions, the frequency of ultra-scaled 2D-NSFET is found to improve by 36% at a fixed power consumption. This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes. At the same time, thanks to the lower characteristic length of 2D semiconductors, the miniaturized 2D-NSFET achieves a 28% frequency increase at a fixed power consumption. Further, developing a standard cell library, these devices obtain a similar trend in 16-bit RISC-V CPUs. This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes, offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.
- Journal
- Nano-Micro Letters
HKU Engineering team reveals how subtle crystal “twists” control light in perovskites, paving way for improved LEDs, solar cells and quantum technologies
The University of Hong Kong- Journal
- Journal of the American Chemical Society
Long term biochar aging reshapes antibiotic transport in farmland soils, new study finds
Biochar Editorial Office, Shenyang Agricultural University- Journal
- Biochar