MIT researchers find a new approach to carbon capture could slash costs
Peer-Reviewed Publication
Updates every hour. Last Updated: 5-May-2026 13:16 ET (5-May-2026 17:16 GMT/UTC)
MIT researchers developed a new fabrication method that could enable them to stack multiple active components, like transistors and memory units, on top of an existing circuit, which would improve the energy efficiency of electronic devices.
This two-year effort develops innovative 3D-printed materials to remove excess phosphorus from freshwater systems and curb harmful algal blooms. Backed by statewide water-quality investments and prior research, the project will create durable, retrievable structures that provide a more effective, environmentally safe method for long-term nutrient removal. It also includes educational outreach to strengthen the local workforce and public awareness. The work addresses the growing threat HABs pose to ecosystems, public health, the economy and quality of life, driven largely by phosphorus from runoff and other nutrient sources.
A cellular gate, called PANX1, accommodates cargo of vastly different sizes. Study is first to find the channel uses a ring of amino acids to form a flexible gate that dilates and constricts. Researchers also found a common antimalarial drug binds to a previously unknown site in PANX1 to control the gate.
Researchers at the University of Jyväskylä have discovered a simple way to program synthetic molecules so they can form specific spiral-like structures by embedding instructions directly into their sequence. This breakthrough could lead to new smart materials and molecular devices that adapt to their surroundings.
Using a dual-cation substitution approach, researchers at Science Tokyo introduced ferromagnetism into bismuth ferrite, a well-known and promising multiferroic material for next-generation memory technologies. By replacing ions at both the bismuth and iron sites with calcium ions and heavier elements, they modified the spin structure and achieved ferromagnetism at room temperature. Additionally, negative thermal expansion was observed. This ability to engineer magnetism and thermal expansion in a multiferroic material aids in realizing future memory devices.