Silicon carbide: a promising material for high-temperature pressure sensors
Peer-Reviewed Publication
Updates every hour. Last Updated: 8-May-2025 06:09 ET (8-May-2025 10:09 GMT/UTC)
A new review paper in Engineering delves into silicon carbide (SiC)-based pressure sensors. SiC, a third-generation semiconductor, shows great potential for high-temperature applications. The report covers SiC’s material properties, key technologies in sensor development like piezoresistive effect, ohmic contact, etching, and packaging, along with future research directions.
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