Lab to fab at the wafer-scale for SiC
Kyoto UniversityReports and Proceedings
Kyoto, Japan -- While silicon carbide -- SiC -- has long been promoted as the key to developing electronics suitable for extreme environments, the field has been stuck in the lab for some time. Now, a team of researchers focusing on junction field-effect transistors, or JFETs, have succeeded in developing a new SiC transistor structure that can operate at 600°C, as announced recently by Kyoto University.* One of the team's goals after their previous study was to scale up to wafer-level production, so that is what they have now accomplished.
Compared with the previous study, wafer-scale production refers to building much smaller components and involves developing a minuscule but more efficient SiC transistor. Progressing to the wafer-scale is essential for practical implementation, as the fabrication of integrated circuits requires a large number of very small transistors.
However, wafer-scale production is virtually impossible to accomplish in a university laboratory due to equipment constraints. This motivated the team to collaborate with Phenitec Semiconductor Corp, which operates a mass-production fabrication plant, making this next step in their research feasible.