Mixed-dimensional nanowires/nanosheet heterojunction of GaSb/Bi2O2Se for self-powered near-infrared photodetection and photocommunication
Peer-Reviewed Publication
Updates every hour. Last Updated: 13-Nov-2025 01:11 ET (13-Nov-2025 06:11 GMT/UTC)
With high surface-to-volume ratio, the abundant surface states and high carrier concentration are challenging the near-infrared photodetection behaviors of narrow band gap semiconductors nanowires. In this study, the narrow band gap semiconductor of Bi2O2Se nanosheets (NSs) is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires (NWs) for demonstrating the impressive self-powered NIR photodetection. Benefiting from the built-in electric field of ~ 140 meV, the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA, high Ilight/Idark ratio of 82 and fast response times of < 2/2 ms at room temperature. The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique. The excellent photodetection performance promises the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.
Spina bifida is a serious congenital condition caused by abnormal neural tube development during early pregnancy. While folic acid supplementation has dramatically reduced its incidence, cases persist due to a complex interplay of genetic mutations and environmental exposures.
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