图3 γ-InSe和α(3R)-In2Se3中Se-Se键与In-In键的投影晶体轨道哈密顿布居(pCOHP)分析（其中红色区域表示反键作用，蓝色区域表示成键作用，费米能级设为零点参照）。 (IMAGE)

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Shengnan Dai
Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 200444, China.
musenc@shu.edu.cn

Lirong Song
Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 200444, China.
lirongsong@shu.edu.cn

Jiong Yang
Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 200444, China.
jiongy@t.shu.edu.cn

图3 γ-InSe和α(3R)-In2Se3中Se-Se键与In-In键的投影晶体轨道哈密顿布居(pCOHP)分析（其中红色区域表示反键作用，蓝色区域表示成键作用，费米能级设为零点参照）。 (IMAGE)

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