图4 InTe、In4Se3、β/γ-InSe、α(3R)-In2Se3和InS的声子能带结构及总/分波声子态密度计算结果，揭示了这些二元铟基硫族化合物中独特的声子散射机制和非谐振动行为。 (IMAGE)

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Shengnan Dai
Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 200444, China.
musenc@shu.edu.cn

Lirong Song
Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 200444, China.
lirongsong@shu.edu.cn

Jiong Yang
Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 200444, China.
jiongy@t.shu.edu.cn

图4 InTe、In4Se3、β/γ-InSe、α(3R)-In2Se3和InS的声子能带结构及总/分波声子态密度计算结果，揭示了这些二元铟基硫族化合物中独特的声子散射机制和非谐振动行为。 (IMAGE)

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