PolyU develops quantum-tunnelling field-effect transistor to overcome barriers to integrated-circuit chip development (IMAGE)

The Hong Kong Polytechnic University

PolyU develops quantum-tunnelling field-effect transistor to overcome barriers to integrated-circuit chip development

Caption

Operating at room temperature, the TFET required a gate-voltage range of only 160 mV—far lower than the 800 mV originally required, paving the way for ultra-low-power, high-performance integrated circuits essential for emerging AI chips and advanced semiconductor applications.

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polyu

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