PolyU develops quantum-tunnelling field-effect transistor to overcome barriers to integrated-circuit chip development (IMAGE)

The Hong Kong Polytechnic University

PolyU develops quantum-tunnelling field-effect transistor to overcome barriers to integrated-circuit chip development

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By replacing thermionic emission with quantum tunnelling, Prof. Jianhua Hao (left), Dr. Zehan Wu (right), and the research team successfully created a high-performance device with high output current and overcame the known “Boltzmann limit”, offering a fundamental building block for energy-efficient computing.

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