PolyU develops quantum-tunnelling field-effect transistor to overcome barriers to integrated-circuit chip development (IMAGE)
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Prof. Jianhua Hao, Head of the Department of Physics and Materials, Chair Professor of Materials Physics and Devices and Associate Director of PolyU-Wuhan Technology and Innovation Research Institute at PolyU (right), Dr. Zehan Wu, Research Assistant Professor from the same department and the first author of the Research Article in Science (left), and the research team, fabricated ultra-thin heterostructure of 2D bismuth (Bi) and indium selenide (InSe) layers using pulsed laser deposition.
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