Time-domain thermoreflectance (TDTR) and phonon measurement at the β-Ga2O3/diamond heterostructure. (IMAGE)

Science China Press

Time-domain thermoreflectance (TDTR) and phonon measurement at the β-Ga2O3/diamond heterostructure.

Caption

(A) Schematic of the TDTR based on a pump and probe technique measuring the TBC of the interface. Comparisons of (B) k of β-Ga2O3 and (C) comparison of TBC of the Ga2O3/diamond interface between this work and previously reported values. (D) The measured electron energy-loss spectroscopy (EELS) mapping across the interface. The interface is labeled as zero position. (E) Phonon spectra and interface vibrational modes. (F) The measured EELS line profile of the fitting residual. (G) The non-negative matrix factorization (NMF) intensity map for component I, II, III, respectively, confirming its interfacial origin, which can facilitate the efficient phonons transfer at the interface.

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