Refractive-index-guided UV-B laser diode structure on a sapphire substrate (IMAGE)
Caption
A compact ultraviolet-B (UV-B) semiconductor laser diode emitting at 318 nm under continuous-wave operation at room-temperature. The device demonstrates stable UV-B lasing on a low-cost sapphire substrate, marking a key step toward practical, energy-efficient UV light sources for medical, biotechnology, and precision manufacturing applications.
Credit
"1.2W Class 4 Very High Power Blue Laser, Dark Background" by FastLizard4 from Openverse
Usage Restrictions
Credit must be given to the creator. Adaptations must be shared under the same terms.
License
CC BY-SA