Cross-sectional structure and emission image of the world’s first room-temperature continuous-wave UV-B laser diode on a sapphire substrate (IMAGE)

Meijo University

Cross-sectional structure and emission image of the world’s first room-temperature continuous-wave UV-B laser diode on a sapphire substrate

Caption

A compact ultraviolet-B (UV-B) semiconductor laser diode emitting at 318 nm under continuous-wave operation at room-temperature. The device demonstrates stable UV-B lasing on a low-cost sapphire substrate, marking a key step toward practical, energy-efficient UV light sources for medical, biotechnology, and precision manufacturing applications.

Credit

Professor Motoaki Iwaya from Meijo University, Japan

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