AI-powered precision: Unlocking the future of immunotherapy through immunogenomics, radiomics, and pathomics
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Updates every hour. Last Updated: 30-Oct-2025 22:11 ET (31-Oct-2025 02:11 GMT/UTC)
Y₂MgTiO₆(YMT)-based ceramics have become core candidates for high-frequency electronic devices such as millimeter-wave communications due to their high dielectric constant (εr), ultra-high quality factor (Q×f) and low dielectric loss. However, most of the existing studies focus on the ion doping effect at a single scale (such as lattice parameters or macroscopic properties), and the structure-activity relationship between atomic bonding, lattice distortion, phonon behavior and dielectric properties has not yet been fully revealed, especially the regulation law of the coupling mechanism of chemical bonding and lattice vibration on doped ions is still theoretically blank. This limits the design and performance control of high-performance microwave dielectric ceramic materials.
Bismuth layer-structured ferroelectrics (BLSFs) have become the preferred high-temperature piezoelectric ceramics due to their elevated Curie temperature (TC) and environmental friendliness. Bi4Ti3O12 (BIT) exhibits a remarkable TC of 675 °C, demonstrating promising potential for high-temperature device applications. However, oxygen vacancies generated during sintering degrade piezoelectric activity. To address this limitation, an A/B-site co-doping strategy was employed to reduce oxygen vacancy concentration and enhance comprehensive electrical properties. Results reveal that introducing A-site substituents with ionic radii comparable to Bi3+ based on non-equivalent B-site doping simultaneously improves piezoelectric performance while maintaining high TC.