News Release

DOE funds research that could lead to faster, energy efficient computers

U of A physicists Charles Paillard, Laurent Bellaiche and Gregory Salamo will investigate at the atomic level a ferroelectric material that could be integrated into existing silicon computing platforms.

Grant and Award Announcement

University of Arkansas

Charles Paillard, research professor at the University of Arkansas.

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Charles Paillard, research professor at the University of Arkansas, received a $975,000 grant from the Department of Energy to study the switching mechanism of aluminum scandium nitride.

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Credit: University of Arkansas

FAYETTEVILLE, Ark. – The Department of Energy awarded just under $975,000 to Charles Paillard, a University of Arkansas research professor of physics and director of the Smart Ferroic Materials Center, to study aluminum scandium nitride at the atomic level. The work could lay the foundation for dramatically faster computers that also consume less energy than current technology. 

“In general terms, we’re trying to see how we can move atoms at the lowest energy cost possible,” Paillard said. 

The project is a partnership with the Department of Energy’s National Renewable Energy Laboratory in Golden, Colorado. 

In the United States, data centers account for 2% of energy consumption, and that number is predicted to rise as demand grows for high-speed or AI computing. Ferroelectrics, a class of materials with spontaneous polarity that can be reversed by an external voltage, hold promise to create faster computers that consume less energy. 

“Most of the ferroelectrics we know are made of oxides and very difficult to integrate on silicon platforms that are everywhere,” Paillard said. “So, we either decide to change all the computing technology in the world, which is going to cost tens or hundreds of billions of dollars and take decades, or we find new ferroelectric materials that are easier to integrate on silicon.” 

Aluminum scandium nitride, the focus of Paillard’s research, can be integrated into existing silicon chips and has recently been shown to have the ferroelectric property needed for high-speed computers. 

Paillard’s research seeks to understand on the atomic level how the polarity of aluminum scandium nitride switches, because the material uses a switching mechanism different from other ferroelectrics. The primary focus will be examining aluminum scandium nitride’s domain wall, the space between the negative and positive polarities. 

As part of the project, post-doctoral researchers or graduate students from the U of A will spend time at National Renewable Energy Laboratory and France’s CentraleSupélec school of engineering, where researchers will have access to an electron microscope. 

“To explore such a complex topic with a vast array of techniques, we need complementary groups to help us,” Paillard said. “I would say it’s a global effort.” 

The grant is sponsored by the Department of Energy’s Established Program to Stimulate Competitive Research (EPSCoR). U of A physics professors Laurent Bellaiche and Gregory Salamo are co-principal investigators on the project. 

About the University of Arkansas: As Arkansas' flagship institution, the U of A provides an internationally competitive education in more than 200 academic programs. Founded in 1871, the U of A contributes more than $3 billion to Arkansas’ economy through the teaching of new knowledge and skills, entrepreneurship and job development, discovery through research and creative activity while also providing training for professional disciplines. The Carnegie Foundation classifies the U of A among the few U.S. colleges and universities with the highest level of research activity. U.S. News & World Report ranks the U of A among the top public universities in the nation. See how the U of A works to build a better world at Arkansas Research and Economic Development News. 


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