InAs XOIs (IMAGE)

DOE/Lawrence Berkeley National Laboratory

InAs XOIs

Caption

Fabricating an indium oxide (InAs) device starts with a) epitaxially growing and etching InAs into nanoribbon arrays that are get stamped onto a silicon/silica (Si/SiO2 ) substrate; b) and c) InAs nanoribbon arrays on Si/SiO2; d) and e) InAs nanoribbon superstructures on Si/SiO2.

Credit

courtesy of Ali Javey, UC Berkeley

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