KAIST Develops Transistor-Based Encryption That Controls When Information Can Be Read (IMAGE)

The Korea Advanced Institute of Science and Technology (KAIST)

KAIST Develops Transistor-Based Encryption That Controls When Information Can Be Read

Caption

Figure 2. Long-term and short-term memory characteristics of the dual-state programmable oxide transistor

When a positive gate voltage is applied, charge trapping changes the electrical state of the device, and the new state is retained for a long time. This represents long-term memory (top panel). When a negative gate voltage is applied, oxygen-ion migration reduces the current, which then gradually recovers over time. This represents short-term memory (bottom panel). Applying voltages of different magnitudes allows the long-term memory state and the recovery of the short-term memory to be controlled separately.

 

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KAIST

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