Single Material Enables Efficient Charge Injection into Two Types of Ultrathin Semiconductors, Paving the Way for Smaller, More Energy-Efficient AI Chips (IMAGE)

The Korea Advanced Institute of Science and Technology (KAIST)

Single Material Enables Efficient Charge Injection into Two Types of Ultrathin Semiconductors, Paving the Way for Smaller, More Energy-Efficient AI Chips

Caption

Figure 1. Concept and interfacial analysis of the universal SnSe₂ van der Waals injector. The schematic illustrates the principle by which the same SnSe2 injector material provides different energy alignments to monolayer p-type WSe2 and monolayer n-type MoS2. Electron microscopy analysis confirmed that the SnSe2/MoS2 interface is atomically sharp, with a uniform interlayer spacing of approximately 2.15 Å. Surface potential mapping shows that the SnSe2 contact is more uniform than a directly deposited nickel contact.

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KAIST

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