Single Material Enables Efficient Charge Injection into Two Types of Ultrathin Semiconductors, Paving the Way for Smaller, More Energy-Efficient AI Chips (IMAGE)

The Korea Advanced Institute of Science and Technology (KAIST)

Single Material Enables Efficient Charge Injection into Two Types of Ultrathin Semiconductors, Paving the Way for Smaller, More Energy-Efficient AI Chips

Caption

Figure 2. Concept diagram of the universal van der Waals tunneling injector for monolayer CMOS. Layered SnSe2 was applied as a universal charge injector to both a monolayer WSe2 p-type channel (left) and a monolayer MoS2 n-type channel (right). Through an atomically flat, low-defect van der Waals interface that suppresses interfacial damage and Fermi-level pinning, holes and electrons are each efficiently injected via distinct tunneling mechanisms. This allows complementary monolayer p-FETs and n-FETs to be realized with a single injector material and integrated into high-performance monolayer CMOS. The circular inset is an actual electron microscopy image of the SnSe2/MoS2 van der Waals interface. (AI-generated image, re-edited)

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KAIST

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