Illustration of the polar wurtzite NbAlN crystal structure (IMAGE)
Caption
Conceptual illustration of polar wurtzite niobium aluminum nitride (NbAlN), a transition-metal-containing nitride semiconductor that preserves the crystal structure and polarity of GaN.
Credit
Associate Professor Atsushi Kobayashi from Tokyo University of Science, Japan | Source link: https://doi.org/10.1002/adma.74756
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Cannot be reused without permission.
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Original content