New Low-Resistance ohmic Contacts for p-type GaN (IMAGE)

Nagoya University

New Low-Resistance ohmic Contacts for p-type GaN

Caption

A new way of depositing very thin films of magnesium followed by soft annealing lowers the contact resistivity in p-type GaN semiconductors. Credit: Jia Wang & Haitao Wang, Nagoya University.

Credit

Haitao Wang & Jia Wang, Nagoya University

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CC BY-ND

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