Fig. 3 (IMAGE)
Caption
Screening results for high-brightness color centers in SiC based on the proposed screening method. Out of approximately 300 impurity-vacancy pairs with different structures and charge states, four defect configurations were identified as promising candidates.
Credit
2026 Iwamoto et al., Unified first-principles framework for predicting radiative and non-radiative processes in color centers. npj Computational Materials
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License
CC BY