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Figure 3. An example of applying the deepSCF methodology to a carbon nanotube-based DNA sequence analysis device model (top left). In addition to classical mechanical interatomic forces (bottom right), the residual electron density (top right) and quantum mechanical electronic structure properties such as the electronic density of states (DOS) (bottom left) containing information on chemical bonding are rapidly predicted with an accuracy corresponding to the standard DFT calculation results that perform the SCF process.
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KAIST Atomic-Scale Device Simulation Lab
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