High quality 4-inch green GaN-on -Si epilayers. (IMAGE)
Caption
High quality 4-inch green GaN-on -Si epilayers. a, Typical photograph of a 4-inch Si-based epitaxial wafer, where the epitaxial structure is shown on the right side. b, High resolution X-ray diffraction pattern of epilayer grown on Si (111) substrate, where FWHM values of rocking curves corresponding to (002) and (102) are measured to be 277 arcsec and 264 arcsec, showcasing the total dislocation of 5.25×108 cm-2. c, The mapping of wafer bowing condition, which indicates convex bowing of 16.7 μm. d, Wafer mapping of the dominant wavelength on the epilayer, exhibiting high wavelength uniformity (STDEV<1 nm).
Credit
by Haifeng Wu, Xiao Lin, Qin Shuai, Youliang Zhu, Yi Fu, Xiaoqin Liao, Yazhou Wang, Yizhe Wang, Chaowei Cheng, Yong Liu, Lei Sun, Xinyi Luo, Xiaoli Zhu, Liancheng Wang, Ziwei Li, Xiao Wang, Dong Li, and Anlian Pan
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Credit must be given to the creator.
License
CC BY