High brightness Micro-LED chips (IMAGE)
Caption
High brightness Micro-LED chips. a, The SEM image of mesas after the wet-treatment combined with atomic sidewall passivation treatment, where not only effectively eliminates residual materials on the sidewalls, but also roughen the surface on the top of mesas. Atomic sidewall passivation approach is developed to address the issue of sidewall defects in small-sized Micro-LEDs, which effectively reduces carrier recombination at defect sites. This passivation process, together with the well-controlled surface roughing, significantly enhanced the optical and electrical performance of the green Micro-LEDs. b, Brightness performance with different currents, where indicates ultra-high brightness (exceeding 107 cd/m²) green Micro-LEDs with 5 μm pixel size has fabricated. c, Photograph of a 4-inch wafer that integrates multiply 0.39-inch green Micro-LED displays. The actual picture of the 0.39-inch Micro-display chip being lit up (the illustration is 30 × 30 arrays).
Credit
by Haifeng Wu, Xiao Lin, Qin Shuai, Youliang Zhu, Yi Fu, Xiaoqin Liao, Yazhou Wang, Yizhe Wang, Chaowei Cheng, Yong Liu, Lei Sun, Xinyi Luo, Xiaoli Zhu, Liancheng Wang, Ziwei Li, Xiao Wang, Dong Li, and Anlian Pan
Usage Restrictions
Credit must be given to the creator.
License
CC BY