Interface gap states and corresponding theories (IMAGE)
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This figure summarized the reasons for interface gap states and and corresponding theories. Figure a and figure c display the schematic of interface gap state model based on metal and n-type and p-type semiconductor interface. In the center of picture (figure b), Many causations about the formation of interface gap states have been proposed to explain the Fermi level pinning effect. They include surface states, metal-induced gap states, defect-related states, and disorder-induced gap states. The associated theories, including fixed separation theory, variable electron affinity theory, and bond polarization theory, have been proposed to quantify the impact of interface gap states on the Fermi level pinning effect.
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Photo credit: Jianping Meng.
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