Interface Contact Optimization via Phosphomolybdic Acid Enables 24.9% Efficiency in MoOX‑Based Silicon Solar Cells (IMAGE)
Caption
- We present a novel phosphomolybdic acid (PMA)/MoOX that overcomes the intrinsic passivation and transport limitations of transition metal oxides in silicon photovoltaics.
- PMA acts as a dual-functional modifier, creating a strong interface dipole (6.34 D) and reducing the tunneling barrier, which lowers the contact resistance by 24%.
- The optimized dopant-free contact achieves a record-breaking efficiency of 24.9%, high-performance silicon solar cells.
Credit
Shaopeng Chen, Qian Kang*, Xiqi Yang, Hao Zhang, Jingjie Li, Wanyu Lu, Linfeng Yang, Tinghao Liu, Dayong Yuan, Zilong Zheng*, Hui Yan, Yongzhe Zhang*.
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License
CC BY-NC-ND