Wafer-scale growth of ultrathin amorphous tellurium oxide via pulsed laser deposition for p-channel Transistors (IMAGE)
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Wafer-scale and ultrathin amorphous tellurium oxide (TeOx) thin films are synthesized by the pulsed-laser deposition (PLD) of tellurium thin films combined with a low-temperature post-annealing process. The thickness, stoichiometry, and optical bandgap of TeOx can be precisely controlled by PLD technique and oxidation process, which gives rise to thin-film field-effect transistors with a competitive hole transport characteristic as compared to reported amorphous TeOx thin films. Our findings promise a facile and controllable approach to prepare wafer-scale and ultrathin p-type oxides for future complementary electronics.
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Nano Research, Tsinghua University Press
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