Reactive phase-transformed contacts preserve fragile interfaces in 2D transistors (IMAGE)

Tsinghua University Press

Reactive phase-transformed contacts preserve fragile interfaces in 2D transistors

Caption

The reactive phase-transformed contact strategy protects two-dimensional semiconductor surfaces during metal deposition. A low-energy tellurium buffer layer is first deposited to shield the fragile semiconductor lattice from energetic palladium atoms. A subsequent low-temperature annealing process converts the tellurium/palladium stack into a conductive PdTe2 electrode. The resulting van der Waals contact interface reduces Fermi-level pinning and improves carrier injection in two-dimensional transistors.

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Nano Research, Tsinghua University Press

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