KAIST Solves 3D Memory Reliability Problem with "Oxygen Tunnel" Structure, Boosting AI Chip Performance and Reducing Power Consumption (IMAGE)
Caption
Figure 1. Oxide Vertical Channel Transistor with an Oxygen-Tunnel Structure
In the conventional structure, oxygen diffusing from the interlayer dielectric has two opposing effects: it reduces oxygen vacancies—missing oxygen atoms that destabilize the channel—which is beneficial, but it also oxidizes the electrode interface, which is not. The research team introduced an oxygen-tunnel structure made of silicon nitride/silicon dioxide/silicon nitride, selectively supplying oxygen toward the channel while blocking its diffusion toward the electrode. This improved channel stability while suppressing the rise in contact resistance, achieving high current characteristics and strong reliability at the same time. Cross-sectional transmission electron microscopy (TEM) of the fabricated oxygen-tunnel vertical channel transistor confirms a high-quality hole profile and successful formation of the intended oxygen-tunnel stack.
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KAIST
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