Orbitronics-based MRAM device under picosecond pulsers (IMAGE)

Science China Press

Orbitronics-based MRAM device under picosecond pulsers

Caption

(Left) Schematic of an orbital torque-driven magnetic tunnel junction. Orbital angular momentum is generated and subsequently converted into spin angular momentum to switch the magnetic memory. (Right) The device is confirmed to be switchable by 28.7‑ps electrical pulses generated from the home‑built picosecond pulser.

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