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To build the device, the researchers used molybdenum disulfide, an atomically thin semiconductor known for its electrical properties. Then, they engineered an asymmetric transistor architecture in which one electrode partially overlapped the semiconductor through a thin insulating layer. That seemingly small design change fundamentally altered how electricity flows through the device. Simply reversing the direction of the applied voltage switches the memtransistor between excitatory and inhibitory modes.
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Mark C. Hersam/Northwestern University
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