Bond-Angle Modulation in Nucleation Layer Overcomes Lattice-Mismatch Limits in Ga2O3 Heteroepitaxy (IMAGE)

Materials Futures

Bond-Angle Modulation in Nucleation Layer Overcomes Lattice-Mismatch Limits in Ga2O3 Heteroepitaxy

Caption

The gradient GaON structure, high-quality Ga2O3 heteroepitaxy, and superior detector performance.

Credit

Weifeng Yang, Xiamen University.

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Credit must be given to the creator.

License

CC BY

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