Ultrathin (Al,Sc)N Ferroelectric Capacitors for Next-Generation Memory Devices (IMAGE)

Institute of Science Tokyo

Ultrathin (Al,Sc)N Ferroelectric Capacitors for Next-Generation Memory Devices

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Researchers at Science Tokyo create ultrathin ferroelectric capacitor stacks, supporting compact memory for high-density electronics.

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Institute of Science Tokyo (Science Tokyo)

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