Atomic-resolution image of a superconducting germanium gallium (Ge:Ga) trilayer with the alternating Ge:Ga and silicon (Si) layers demonstrating precise control of atomic interfaces, a key step toward quantum devices. (IMAGE)
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Atomic-resolution image of a superconducting germanium gallium (Ge:Ga) trilayer with the alternating Ge:Ga and silicon (Si) layers demonstrating precise control of atomic interfaces, a key step toward quantum devices.
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Salva Salmani-Rezaie
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