High-Entropy Oxide Memristors for Neuromorphic Computing: From Material Engineering to Functional Integration (IMAGE)
Caption
- Comprehensive overview of high-entropy oxides (HEOs) in memristive devices, emphasizing their potential in neuromorphic computing and their ability to simulate synaptic plasticity and multilevel conductance modulation.
- Detailed exploration of resistive switching mechanisms in HEO-based memristors, focusing on vacancy migration, phase transitions, and valence-state dynamics, which underpin their performance in brain-inspired electronics.
- Insightful discussion on the challenges and opportunities for integrating HEO-based memristors into large-scale neuromorphic systems, highlighting the need for advancements in material design, interface optimization, and scalability.
Credit
Jia-Li Yang, Xin-Gui Tang*, Xuan Gu, Qi-Jun Sun, Zhen-Hua Tang, Wen-Hua Li, Yan-Ping Jiang.
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License
CC BY-NC-ND