Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase (IMAGE)
Caption
- Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity.
- Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor.
- The stored charge density of the capacitor is as high as 183 μC cm-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown.
Credit
Wen Di Zhang, Bing Li, Wei Wei Wang, Xing Ya Wang, Yan Cheng, An Quan Jiang.
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CC BY-NC-ND