Semiconductor breakthrough enables next-generation wireless networks (IMAGE)

Nagoya University

Semiconductor breakthrough enables next-generation wireless networks

Caption

Assistant Professor Shigehisa Shibayama (right) and first author Shota Torimoto (left), along with the rest of the team, have developed a resonant tunneling diode using only non-toxic Group IV semiconductor materials that operates at room temperature.

Credit

Shigehisa Shibayama (Nagoya University) and Shota Torimoto (Nagoya University)

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License

CC BY-NC-ND

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