Advancing ferroelectric materials by doping with higher concentrations of Scandium (Sc) (IMAGE)

Institute of Science Tokyo

Advancing ferroelectric materials by doping with higher concentrations of Scandium (Sc)

Caption

This infographic outlines the background, methodologies, and results of this study, which advances our knowledge of materials for ultra-low-power ferroelectric memory devices. Researchers synthesize wurtzite structure ternary alloys with record-high Sc content, thereby reducing power consumption in memory devices.

Credit

Institute of Science Tokyo, Japan

Usage Restrictions

For use in scientific news only. Attribution is required. The image may not be modified in ways that alter its meaning or context.

License

Original content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.