Monolithic bidirectional 1200 V GaN switches (MBDS) with integrated free-wheeling diodes (IMAGE)

Fraunhofer Institute for Applied Solid State Physics

Monolithic bidirectional 1200 V GaN switches (MBDS) with integrated free-wheeling diodes

Caption

Monolithic bidirectional 1200 V GaN switches (MBDS) with integrated free-wheeling diodes, manufactured at Fraunhofer IAF in a multi-project wafer run using GaN-on-insulator technology

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© Fraunhofer IAF

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