A schematic representation of in-memory computing using electrochemical memory devices (ECRAMs) arranged in a cross-point array structure, mimicking the way synapses in the brain process information (IMAGE)

Pohang University of Science & Technology (POSTECH)

A schematic representation of in-memory computing using electrochemical memory devices (ECRAMs) arranged in a cross-point array structure, mimicking the way synapses in the brain process information

Caption

A schematic representation of in-memory computing using electrochemical memory devices (ECRAMs) arranged in a cross-point array structure, mimicking the way synapses in the brain process information. When voltage is applied to the device, ions move within the channel, enabling simultaneous computation and data storage. This study reveals how ions and electrons behave under applied voltage, uncovering the device’s internal operational dynamics.

Credit

POSTECH

Usage Restrictions

None

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.