Figure 1 (IMAGE)

Advanced Institute for Materials Research (AIMR), Tohoku University

Figure 1

Caption

MRAM consists of semiconductor transistor (FET) and magnetic tunnel junctions with perpendicular magnetic anisotropy (Left panel). For non-volatile data retention over ten years in magnetic tunnel junction, thermal stability factor, Δ, needs to exceed 60; thus large perpendicular magnetic anisotropy K is required for nano-scale MTJs with magnetic layer with thickness t and radius D smaller than several tens nm. (right panel) 

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©S. Mizukami

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