Figure 1 (IMAGE)

Advanced Institute for Materials Research (AIMR), Tohoku University

Figure 1

Caption

The structure of the zinc oxide (ZnO) device. A two-dimensional electron gas (2DEG) forms at the (Mg, Zn)O/ZnO interface. By applying voltages to the gate electrodes, we can confine electrons in a quantum dot. (b) An SEM image of the fabricated ZnO quantum dot device. The quantum dot is created in the circled region. 

Credit

Kosuke Noro et al.

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