Defect-induced phase competition to strengthen polarization switching and dielectric temperature stability (IMAGE)
Caption
Aliovalent Sm-doping at A-site enables defect-induced phase competition between tetragonal phase and pseudo-cubic phase not only strengthens polarization switching ability but also improves dielectric temperature stability via thermal evolutions. A high 91% energy efficiency with discharge density of 2.1 J/cm3 was achieved in Sm0.07-BNBST ceramics at a low electric field of 114 kV/cm, which is closely related to a reduced Pr demonstrated by PFM measurement.
Credit
Journal of Advanced Ceramics, Tsinghua University Press
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License
CC BY