An Atomically Controllable Insulator-to-Metal Transition Achieved in Strongly Correlated Insulator Heterostructures (IMAGE)
Caption
(a) In-plane magnetic field-dependent magnetoresistance (MR) of LSMO-LSAT film and 3CIO/20LSMO heterostructure at various temperatures. (b) Evolution of the insulating strength p(150K)/p(300K) with CIO thickness and in-plane lattice parameter a. Dashed line represents where the insulator-to-metal transition occurs.
Credit
HAO Lin
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